Abstract

This paper presents a fully integrated, four-stack power amplifier for millimeter-wave wireless applications, designed and fabricated using 45nm CMOS SOI technology. The operation frequency is from 20GHz to 30GHz, with a maximum gain of 13.7 dB. Maximum RF output power, power-added eficiency and output 1dB compression point are 20.5 dBm, 29% and 18dBm, respectively, achieved at 24GHz. EVM of 12.5% was measured at average channel power of 14.5 dBm using 100MHz 16-QAM 3GPP/NR OFDM signal at 26GHz.